FDD14AN06LA0_F085 Fairchild Semiconductor, FDD14AN06LA0_F085 Datasheet - Page 3

• Manufacturer Part Number: FDD14AN06LA0_F085
• Description: MOSFET 60V N-CHAN PwrTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDD14AN06LA0_F085

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 50 A
• Resistance Drain-source Rds (on): 12.8 mOhms
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-252AA
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 125 W
• Factory Pack Quantity: 2500

©2010 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 1. Normalized Power Dissipation vs
1.2
1.0
0.8
0.6
0.4
0.2
0
0.01
0.1
1000
0
100
2
1
40
10
10
-5
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
-5
25
V
V
GS
GS
Ambient Temperature
= 10V
= 5V
T
50
C
SINGLE PULSE
, CASE TEMPERATURE (
Figure 3. Normalized Maximum Transient Thermal Impedance
10
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
75
10
-4
-4
100
T
C
Figure 4. Peak Current Capability
= 25°C unless otherwise noted
125
o
C)
10
10
-3
-3
t , RECTANGULAR PULSE DURATION (s)
150
175
t , PULSE WIDTH (s)
Figure 2. Maximum Continuous Drain Current vs
10
10
-2
-2
80
60
40
20
0
25
50
Case Temperature
10
10
T
-1
-1
C
NOTES:
DUTY FACTOR: D = t
PEAK T
, CASE TEMPERATURE (
75
J
= P
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
CURRENT LIMITED
BY PACKAGE
100
T
DM
C
I = I
= 25
x Z
25
V
o
10
GS
10
P
JC
C
DM
1
0
0
o
125
/t
= 5V
x R
C DERATE PEAK
V
2
GS
175 - T
o
C)
JC
FDD14AN06LA0_F085 Rev. C
150
= 10V
t
1
+ T
t
2
C
150
C
10
10
175
1
1