SQD40N06-14L-GE3 Vishay/Siliconix, SQD40N06-14L-GE3 Datasheet

no-image

SQD40N06-14L-GE3

Manufacturer Part Number
SQD40N06-14L-GE3
Description
MOSFET 55V 40A 75W
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SQD40N06-14L-GE3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
40 A
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-252
Fall Time
9 ns
Forward Transconductance Gfs (max / Min)
52 S
Gate Charge Qg
34 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
75 W
Rise Time
13 ns
Typical Turn-off Delay Time
22 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SQD40N06-14L-GE3
0
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S12-1846-Rev. B, 30-Jul-12
PRODUCT SUMMARY
V
R
R
I
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
D
DS
DS(on)
DS(on)
(A)
G
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
(V)
TO-252
Top View
() at V
() at V
D
S
GS
GS
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
www.vishay.com
Drain Connected to Tab
= 10 V
= 4.5 V
b
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
b
For technical questions, contact:
G
N-Channel MOSFET
a
Single
0.014
0.017
C
60
40
= 25 °C, unless otherwise noted)
D
S
PCB Mount
T
T
T
L = 0.1 mH
T
C
C
C
C
= 125 °C
= 125 °C
= 25 °C
= 25 °C
a
c
1
automostechsupport@vishay.com
TO-252
SQD40N06-14L-GE3
FEATURES
• TrenchFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualified
• 100 % R
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
SYMBOL
SYMBOL
T
R
R
J
V
V
E
I
I
P
, T
DM
thJA
thJC
I
I
AS
GS
DS
D
AS
S
D
stg
g
www.vishay.com/doc?91000
and UIS Tested
®
Power MOSFET
- 55 to + 175
d
LIMIT
LIMIT
± 20
160
60
40
29
40
32
51
75
25
60
2
SQD40N06-14L
Vishay Siliconix
Document Number: 67002
UNIT
°C/W
UNIT
mJ
°C
W
V
A

Related parts for SQD40N06-14L-GE3

SQD40N06-14L-GE3 Summary of contents

Page 1

... Package with Low Thermal Resistance 0.014 • AEC-Q101 Qualified 0.017 • 100 % • Material categorization: Single For definitions of compliance please see www.vishay.com/doc?99912 N-Channel MOSFET TO-252 SQD40N06-14L-GE3 = 25 °C, unless otherwise noted) C SYMBOL ° 125 °C ...

Page 2

...  GEN d(off  2 automostechsupport@vishay.com www.vishay.com/doc?91000 SQD40N06-14L Vishay Siliconix MIN. TYP. MAX 1.5 2.0 2 ± 100 = 125 ° 175 ° 250 J  ...

Page 3

... 0.05 0.04 0.03 0.02 0. automostechsupport@vishay.com SQD40N06-14L Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics Drain Current (A) D On-Resistance vs ...

Page 4

... 100 125 T - Junction Temperature (°C) J Drain Source Breakdown vs. Junction Temperature 4 automostechsupport@vishay.com SQD40N06-14L Vishay Siliconix T = 150 ° °C J 0.2 0.4 0.6 0.8 1 Source-to-Drain Voltage (V) SD Source Drain Diode Forward Voltage 250 μ ...

Page 5

... BVDSS Limited 0.01 0 Drain-to-Source Voltage ( minimum V at which R is specified GS GS DS(on) Safe Operating Area - Square Wave Pulse Duration (s) 5 automostechsupport@vishay.com SQD40N06-14L Vishay Siliconix 100 µ 100 ms 100 10 100 1000 Document Number: 67002 www.vishay.com/doc?91000 ...

Page 6

... S12-1846-Rev. B, 30-Jul-12 For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH Square Wave Pulse Duration (s) 6 automostechsupport@vishay.com www.vishay.com/doc?91000 SQD40N06-14L Vishay Siliconix Document Number: 67002 ...

Page 7

TO-252AA CASE OUTLINE Revision: 22-Apr-13 For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 8

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) Return to Index Return to Index Document Number: 72594 Revision: 21-Jan-08 Application Note 826 0.224 (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Vishay Siliconix www.vishay.com 3 ...

Page 9

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

Related keywords