SQD40N06-14L-GE3 Vishay/Siliconix, SQD40N06-14L-GE3 Datasheet - Page 2

• Manufacturer Part Number: SQD40N06-14L-GE3
• Description: MOSFET 55V 40A 75W
• Manufacturer: Vishay/Siliconix

Specifications of SQD40N06-14L-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 40 A
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-252
• Fall Time: 9 ns
• Forward Transconductance Gfs (max / Min): 52 S
• Gate Charge Qg: 34 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 75 W
• Rise Time: 13 ns
• Typical Turn-off Delay Time: 22 ns

Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-1846-Rev. B, 30-Jul-12
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics
Pulsed Current
Forward Voltage




THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
c
b
c
a
www.vishay.com
c
c
c
c
c
a
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
a
C
= 25 °C, unless otherwise noted)
a
For technical questions, contact:
SYMBOL
R
V
I
t
t
I
C
V
I
C
C
Q
V
GS(th)
D(on)
DS(on)
Q
d(on)
d(off)
I
GSS
DSS
g
Q
R
SM
t
oss
t
DS
rss
SD
iss
gd
fs
gs
r
f
g
g
b

V
V
V
V
V
V
V
V
V
V
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
I
D
= 4.5 V
= 10 V
= 10 V
= 10 V
= 10 V
= 10 V
= 0 V
= 0 V
= 0 V
= 0 V
 40 A, V
2
[e-mail]
V
V
V
V
DD
DS
TEST CONDITIONS
V
DS
DS
GS
I
F
= 0 V, V
= 30 V, R
= V
= 20 A, V
= 15 V, I
= 0, I
f = 1 MHz
GEN
GS
V
V
I
I
V
V
DS
DS
D
D
I
D
, I
DS
DS
D
= 20 A, T
= 20 A, T
= 10 V, R
GS
= 20 A, T
D
= 60 V, T
= 60 V, T
= 250 μA
= 25 V, f = 1 MHz
L
= 30 V, I
D
= 250 μA
GS
V
= ± 20 V
= 0.75 
V
I
= 20 A
DS
D
www.vishay.com/doc?91000
DS
= 0
= 20 A
= 60 V
5 V
J
J
g
J
J
J
= 125 °C
= 175 °C
D
= 1 
= 25 °C
= 125 °C
= 175 °C
= 40 A
MIN.
1.20
1.5
60
30
SQD40N06-14L
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-
-
-
-
-
-
-
-
-
-
-
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-
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-
-
Vishay Siliconix
Document Number: 67002
0.011
0.014
TYP.
1685
2.46
0.85
305
180
2.0
8.5
52
34
13
22
6
8
9
-
-
-
-
-
-
-
-
-
MAX.
± 100
0.014
0.024
0.029
0.017
2105
3.70
250
385
225
160
2.5
1.2
50
51
13
12
20
33
14
1
9
-
-
-
UNIT
nC
nA
μA
pF
ns


V
A
S
A
V