SQD40N06-14L-GE3 Vishay/Siliconix, SQD40N06-14L-GE3 Datasheet - Page 5

• Manufacturer Part Number: SQD40N06-14L-GE3
• Description: MOSFET 55V 40A 75W
• Manufacturer: Vishay/Siliconix

Specifications of SQD40N06-14L-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 40 A
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-252
• Fall Time: 9 ns
• Forward Transconductance Gfs (max / Min): 52 S
• Gate Charge Qg: 34 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 75 W
• Rise Time: 13 ns
• Typical Turn-off Delay Time: 22 ns

THERMAL RATINGS (T
S12-1846-Rev. B, 30-Jul-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
0.01
0.1
2
1
10
-4
0.05
Duty Cycle = 0.5
0.02
0.1
0.2
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
10
Single Pulse
-3
A
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
For technical questions, contact:
100
0.01
0.1
10
0.01
1
10
* V
-2
Limited by
R
GS
DS(on)
T
Single Pulse
C
= 25 °C
minimum V
V
*
0.1
I
DS
DM
Square Wave Pulse Duration (s)
- Drain-to-Source Voltage (V)
Limited
Safe Operating Area
10
-1
GS
I
at which R
D
1
Limited
5
[e-mail]
BVDSS Limited
DS(on)
1
10
is specified
www.vishay.com/doc?91000
100 µs
1 ms
10 ms
100 ms, 1 s, 10 s, DC
100
10
SQD40N06-14L
100
Vishay Siliconix
Document Number: 67002
1000