SQD40N06-14L-GE3 Vishay/Siliconix, SQD40N06-14L-GE3 Datasheet - Page 3

• Manufacturer Part Number: SQD40N06-14L-GE3
• Description: MOSFET 55V 40A 75W
• Manufacturer: Vishay/Siliconix

Specifications of SQD40N06-14L-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 40 A
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-252
• Fall Time: 9 ns
• Forward Transconductance Gfs (max / Min): 52 S
• Gate Charge Qg: 34 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 75 W
• Rise Time: 13 ns
• Typical Turn-off Delay Time: 22 ns

TYPICAL CHARACTERISTICS (T
S12-1846-Rev. B, 30-Jul-12
2500
2000
1500
1000
100
500
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
80
60
40
20
80
64
48
32
16
0
0
0
0
0
0
T
C
C
rss
= 25 °C
V
10
GS
T
www.vishay.com
3
C
8
V
V
= 10 V thru 5 V
DS
= - 55 °C
C
C
DS
Output Characteristics
oss
T
iss
- Drain-to-Source Voltage (V)
C
- Drain-to-Source Voltage (V)
Transconductance
V
20
I
GS
= 125 °C
D
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Capacitance
- Drain Current (A)
= 4 V
16
6
30
24
9
For technical questions, contact:
40
V
GS
A
12
= 3 V
32
= 25 °C, unless otherwise noted)
50
15
40
60
3
[e-mail]
0.05
0.04
0.03
0.02
0.01
100
80
60
40
20
10
0
0
8
6
4
2
0
0
0
0
I
www.vishay.com/doc?91000
D
= 40 A
5
On-Resistance vs. Drain Current
12
1
V
Transfer Characteristics
GS
Q
T
10
g
C
- Gate-to-Source Voltage (V)
V
- Total Gate Charge (nC)
V
= 125 °C
I
GS
GS
D
Gate Charge
T
- Drain Current (A)
24
2
= 4.5 V
C
= 10 V
15
= 25 °C
V
DS
SQD40N06-14L
= 30 V
20
36
3
Vishay Siliconix
T
Document Number: 67002
C
25
= - 55 °C
48
4
30
35
60
5