PSMN7R0-30MLC,115 NXP Semiconductors, PSMN7R0-30MLC,115 Datasheet - Page 2

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PSMN7R0-30MLC,115

Manufacturer Part Number
PSMN7R0-30MLC,115
Description
MOSFET N-channel MOSFET logic level LFPAK33
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN7R0-30MLC,115

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
2.15 V
Continuous Drain Current
67 A
Resistance Drain-source Rds (on)
9 mOhms
Mounting Style
SMD/SMT
Package / Case
LFPAK33
Power Dissipation
57 W
Factory Pack Quantity
1500
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN7R0-30MLC
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN7R0-30MLC
Symbol
V
V
I
I
P
T
T
T
V
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
sld(M)
DS
GS
tot
ESD
DS(AL)S
Symbol Description
S
S
S
G
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
electrostatic discharge voltage
source current
peak source current
non-repetitive drain-source
avalanche energy
source
source
source
gate
mounting base; connected to
drain
N-channel 30 V 7 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
LFPAK33
Package
Name
Description
Plastic single ended surface mounted package (LFPAK33);
4 leads
All information provided in this document is subject to legal disclaimers.
Conditions
T
V
V
pulsed; t
see
T
MM (JEDEC JESD22-A115)
T
pulsed; t
V
V
see
Rev. 4 — 15 June 2012
j
mb
mb
GS
GS
GS
sup
Simplified outline
= 25 °C
Figure 4
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 30 V; R
SOT1210 (LFPAK33)
p
p
≤ 10 µs; T
≤ 10 µs; T
1
mb
mb
j(init)
GS
2
= 25 °C; see
= 100 °C; see
= 50 Ω; unclamped;
Figure 2
= 25 °C; I
3
mb
mb
4
= 25 °C;
= 25 °C
D
= 67 A;
Figure 1
Figure 1
PSMN7R0-30MLC
Graphic symbol
mbb076
G
Min
-
-20
-
-
-
-
-55
-55
-
190
-
-
-
© NXP B.V. 2012. All rights reserved.
D
S
Version
SOT1210
Max
30
20
67
48
270
57
175
175
260
-
52
270
18.7
°C
°C
°C
V
Unit
V
V
A
A
A
W
A
A
mJ
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