PSMN7R0-30MLC,115 NXP Semiconductors, PSMN7R0-30MLC,115 Datasheet - Page 8

• Manufacturer Part Number: PSMN7R0-30MLC,115
• Description: MOSFET N-channel MOSFET logic level LFPAK33
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-30MLC,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 2.15 V
• Continuous Drain Current: 67 A
• Resistance Drain-source Rds (on): 9 mOhms
• Mounting Style: SMD/SMT
• Package / Case: LFPAK33
• Power Dissipation: 57 W
• Factory Pack Quantity: 1500

NXP Semiconductors
PSMN7R0-30MLC
Product data sheet
Fig 12. Gate charge waveform definitions
Fig 14. Input, output and reverse transfer capacitances
(pF)
10
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
N-channel 30 V 7 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
C
C
C
All information provided in this document is subject to legal disclaimers.
DS
003aaa508
iss
rss
003aaj546
oss
(V)
10
2
Rev. 4 — 15 June 2012
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source current as a function of source-drain
(A)
V
I
(V)
S
7.5
2.5
80
60
40
20
GS
10
0
5
0
charge; typical values
voltage; typical values
0
0
0.3
PSMN7R0-30MLC
5
6 V
T
j
15 V
= 150 ° C
0.6
10
V
DS
= 24 V
0.9
15
© NXP B.V. 2012. All rights reserved.
T
Q
j
V
= 25 ° C
003aaj545
003aaj547
G
SD
(nC)
(V)
1.2
20
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