BSS84AKMB,315 NXP Semiconductors, BSS84AKMB,315 Datasheet - Page 8

• Manufacturer Part Number: BSS84AKMB,315
• Description: MOSFET P-Chan -50V -230mA
• Manufacturer: NXP Semiconductors

Specifications of BSS84AKMB,315

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 230 mA
• Resistance Drain-source Rds (on): 7.5 Ohms
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: SOT-883B
• Power Dissipation: 715 mW
• Factory Pack Quantity: 10000

NXP Semiconductors
BSS84AKMB
Product data sheet
Fig 11. Transfer characteristics: drain current as a
Fig 13. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
-0.20
-0.15
-0.10
-0.05
I
D
-3
-2
-1
0
0
-60
function of gate-source voltage; typical values
junction temperature
V
(1) T
(2) T
I
(1) maximum values
(2) typical values
(3) minimum values
0
D
DS
= -0.25 mA; V
> I
j
j
= 25 °C
= 150 °C
D
× R
-1
0
DSon
DS
= V
60
-2
(2)
GS
(1)
(1)
(2)
(3)
120
-3
(1)
All information provided in this document is subject to legal disclaimers.
V
001aao128
001aao130
T
GS
j
(°C)
(V)
(2)
180
-4
Rev. 1 — 6 June 2012
Fig 12. Normalized drain-source on-state resistance as
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
a
10
2.0
1.5
1.0
0.5
10
0
1
-10
2
-60
a function of junction temperature; typical
values
as a function of drain-source voltage; typical
values
f = 1 MHz, V
(1) C
(2) C
(3) C
-1
iss
oss
rss
50 V, single P-channel Trench MOSFET
0
GS
-1
(1)
(2)
(3)
= 0 V
60
BSS84AKMB
-10
120
V
© NXP B.V. 2012. All rights reserved.
DS
001aao129
T
001aao131
j
(V)
(°C)
-10
180
2
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