BSS84AKMB,315 NXP Semiconductors, BSS84AKMB,315 Datasheet - Page 9

• Manufacturer Part Number: BSS84AKMB,315
• Description: MOSFET P-Chan -50V -230mA
• Manufacturer: NXP Semiconductors

Specifications of BSS84AKMB,315

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 230 mA
• Resistance Drain-source Rds (on): 7.5 Ohms
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: SOT-883B
• Power Dissipation: 715 mW
• Factory Pack Quantity: 10000

NXP Semiconductors
BSS84AKMB
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source current as a function of source-drain voltage; typical values
V
(V)
GS
-10
-8
-6
-4
-2
0
charge; typical values
I
V
(1) T
(2) T
0
D
GS
= -0.2 A; V
= 0 V
j
j
= 150 °C
= 25 °C
0.2
DS
= -25 V; T
amb
0.4
(A)
I
S
-0.3
-0.2
-0.1
= 25 °C
0
Q
0
All information provided in this document is subject to legal disclaimers.
G
001aao132
(nC)
0.6
Rev. 1 — 6 June 2012
-0.4
Fig 16. Gate charge waveform definitions
(1)
-0.8
(2)
V
V
SD
V
V
V
GS(pl)
001aao133
DS
GS(th)
GS
(V)
50 V, single P-channel Trench MOSFET
-1.2
Q
GS1
I
Q
D
GS
Q
GS2
Q
BSS84AKMB
G(tot)
Q
GD
© NXP B.V. 2012. All rights reserved.
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