BSS84AKMB,315 NXP Semiconductors, BSS84AKMB,315 Datasheet - Page 9
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BSS84AKMB,315
Manufacturer Part Number
BSS84AKMB,315
Description
MOSFET P-Chan -50V -230mA
Manufacturer
NXP Semiconductors
Datasheet
1.BSS84AKMB315.pdf
(15 pages)
Specifications of BSS84AKMB,315
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 230 mA
Resistance Drain-source Rds (on)
7.5 Ohms
Configuration
Single
Mounting Style
SMD/SMT
Package / Case
SOT-883B
Power Dissipation
715 mW
Factory Pack Quantity
10000
NXP Semiconductors
BSS84AKMB
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source current as a function of source-drain voltage; typical values
V
(V)
GS
-10
-8
-6
-4
-2
0
charge; typical values
I
V
(1) T
(2) T
0
D
GS
= -0.2 A; V
= 0 V
j
j
= 150 °C
= 25 °C
0.2
DS
= -25 V; T
amb
0.4
(A)
I
S
-0.3
-0.2
-0.1
= 25 °C
0
Q
0
All information provided in this document is subject to legal disclaimers.
G
001aao132
(nC)
0.6
Rev. 1 — 6 June 2012
-0.4
Fig 16. Gate charge waveform definitions
(1)
-0.8
(2)
V
V
SD
V
V
V
GS(pl)
001aao133
DS
GS(th)
GS
(V)
50 V, single P-channel Trench MOSFET
-1.2
Q
GS1
I
Q
D
GS
Q
GS2
Q
BSS84AKMB
G(tot)
Q
GD
© NXP B.V. 2012. All rights reserved.
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