IPB039N10N3GE818XT Infineon Technologies, IPB039N10N3GE818XT Datasheet
IPB039N10N3GE818XT
Specifications of IPB039N10N3GE818XT
Related parts for IPB039N10N3GE818XT
IPB039N10N3GE818XT Summary of contents
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Type ™ 3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC • N-channel, logic level • Excellent gate charge x R • Very low on-resistance R • 100% Avalanche ...
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Maximum ratings =25 ° C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics, at ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...
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Power dissipation P =f(T ) tot C 100 Safe operating area I =f =25 ° parameter limited by on-state ...
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Typ. output characteristics I =f =25 ° parameter 250 200 4.5 V 150 100 Typ. transfer characteristics I =f |>2|I ...
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Drain-source on-state resistance DS(on -60 - Typ. capacitances C =f MHz ...
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Avalanche characteristics = =f parameter: T j(start) 100 Drain-source breakdown voltage V =f BR(DSS ...
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Package Outline Footprint: Rev. 1.2 PG-TO220-3-1 Packaging: page 8 IPP039N04L G IPB039N04L G 2009-12-17 ...
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Package Outline Rev. 1.2 PG-TO263-3 page 9 IPP039N04L G IPB039N04L G 2009-12-17 ...
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Rev. 1.2 page 10 IPP039N04L G IPB039N04L G 2009-12-17 ...