IPB039N10N3GE818XT Infineon Technologies, IPB039N10N3GE818XT Datasheet - Page 4

• Manufacturer Part Number: IPB039N10N3GE818XT
• Description: MOSFET OptiMOS 3 Power Transistor
• Manufacturer: Infineon Technologies

Specifications of IPB039N10N3GE818XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Resistance Drain-source Rds (on): 3.9 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: PG-TO263-3
• Fall Time: 6 ns
• Gate Charge Qg: 59 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 94 W
• Rise Time: 5.4 ns
• Typical Turn-off Delay Time: 38 ns
• Part # Aliases: E8187 G IPB039N10N3 IPB039N10N3GE8187ATMA1

Rev. 1.2
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
100
10
10
10
10
10
80
60
40
20
DS
0
-1
3
2
1
0
C
10
0
); T
)
-1
limited by on-state
resistance
C
p
=25 ° C; D =0
50
10
DC
0
T
V
C
DS
100
[° C]
[V]
10
10 ms
1
100 µs
1 ms
150
10 µs
1 µs
200
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
100
=f(t
10
10
10
10
10
80
60
40
20
C
0
-1
-2
-3
1
0
); V
10
p
0
)
-6
0.02
0.01
0.5
0.2
0.05
0.1
GS
single pulse
10 V
10
p
/T
-5
50
10
-4
T
t
C
100
10
p
[°C]
[s]
-3
10
IPB039N04L G
IPP039N04L G
-2
150
10
-1
2009-12-17
200
10
0