IPB039N10N3GE818XT Infineon Technologies, IPB039N10N3GE818XT Datasheet - Page 7

• Manufacturer Part Number: IPB039N10N3GE818XT
• Description: MOSFET OptiMOS 3 Power Transistor
• Manufacturer: Infineon Technologies

Specifications of IPB039N10N3GE818XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Resistance Drain-source Rds (on): 3.9 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: PG-TO263-3
• Fall Time: 6 ns
• Gate Charge Qg: 59 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 94 W
• Rise Time: 5.4 ns
• Typical Turn-off Delay Time: 38 ns
• Part # Aliases: E8187 G IPB039N10N3 IPB039N10N3GE8187ATMA1

Rev. 1.2
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
45
40
35
30
25
20
AV
1
10
-60
=f(T
); R
-1
j
GS
); I
j(start)
=25 W
-20
D
=1 mA
10
0
20
150 °C
t
T
AV
j
10
60
[° C]
[µs]
1
100 ° C
100
10
2
25 °C
140
180
10
page 7
3
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g (th)
g s(th)
GS
0
gate
); I
DD
Q
D
=30 A pulsed
g s
20
Q
Q
gate
g
Q
sw
[nC]
Q
g d
40
IPB039N04L G
IPP039N04L G
8 V
Q
32 V
20 V
g ate
2009-12-17
60