BUK9230-100B /T3 NXP Semiconductors, BUK9230-100B /T3 Datasheet
BUK9230-100B /T3
Specifications of BUK9230-100B /T3
Related parts for BUK9230-100B /T3
BUK9230-100B /T3 Summary of contents
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... BUK9230-100B N-channel TrenchMOS logic level FET Rev. 02 — 1 February 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9230-100B N-channel TrenchMOS logic level FET Graphic symbol G mbb076 2 3 © NXP B.V. 2011. All rights reserved. ...
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... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9230-100B N-channel TrenchMOS logic level FET Min - - - see Figure 1 - Figure 1; - ≤ 10 µ -55 ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK9230-100B Product data sheet = DSon All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9230-100B N-channel TrenchMOS logic level FET 03no39 = 10 μ 100 μ 100 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9230-100B Product data sheet Conditions see Figure 4 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9230-100B N-channel TrenchMOS logic level FET Min Typ - - - 71.4 03nk52 t p δ ...
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... ° see Figure /dt = -100 A/µ - All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9230-100B N-channel TrenchMOS logic level FET Min Typ Max = -55 ° °C 100 - - j 0 1.1 1 ...
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... DS Fig 6. 03no34 V GS(th) ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9230-100B N-channel TrenchMOS logic level FET Drain-source on-state resistance as a function of gate-source voltage; typical values 2.5 (V) 2.0 max 1.5 typ 1 ...
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... Fig 10. Gate-source voltage as a function of gate 03no38 (V) DS Fig 12. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9230-100B N-channel TrenchMOS logic level FET ...
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... Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature BUK9230-100B Product data sheet 10 80 All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9230-100B N-channel TrenchMOS logic level FET 03np02 150 220 ° C) © NXP B.V. 2011. All rights reserved. ...
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... min min 5.46 0.56 6.22 6.73 4.0 4.45 5.00 0.20 5.98 6.47 REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9230-100B N-channel TrenchMOS logic level FET min 10.4 2.95 2.285 4.57 0.5 9.6 2.55 EUROPEAN PROJECTION SOT428 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK9230-100B v.2 20110201 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9230-100B N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9230-100B N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 1 February 2011 Document identifier: BUK9230-100B ...