BUK9230-100B /T3 NXP Semiconductors, BUK9230-100B /T3 Datasheet - Page 9

• Manufacturer Part Number: BUK9230-100B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9230-100B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 47 A
• Resistance Drain-source Rds (on): 0.028 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 185 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Fall Time: 46 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 167 W
• Rise Time: 86 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 96 ns
• Part # Aliases: BUK9230-100B,118

NXP Semiconductors
BUK9230-100B
Product data sheet
Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature
a
2.8
2.1
1.4
0.7
0
-60
All information provided in this document is subject to legal disclaimers.
10
Rev. 02 — 1 February 2011
80
150
N-channel TrenchMOS logic level FET
T j ( ° C)
03np02
BUK9230-100B
220
© NXP B.V. 2011. All rights reserved.
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