BUK9230-100B /T3 NXP Semiconductors, BUK9230-100B /T3 Datasheet - Page 11

• Manufacturer Part Number: BUK9230-100B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9230-100B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 47 A
• Resistance Drain-source Rds (on): 0.028 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 185 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Fall Time: 46 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 167 W
• Rise Time: 86 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 96 ns
• Part # Aliases: BUK9230-100B,118

NXP Semiconductors
8. Revision history
Table 7.
BUK9230-100B
Product data sheet
Document ID
BUK9230-100B v.2
Modifications:
BUK9230_100B v.1
Revision history
Release date
20110201
20040122
•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 February 2011
Data sheet status
Product data sheet
Product data
Change notice
-
-
N-channel TrenchMOS logic level FET
BUK9230-100B
Supersedes
BUK9230_100B v.1
-
© NXP B.V. 2011. All rights reserved.
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