PSMN005-30K /T3 NXP Semiconductors, PSMN005-30K /T3 Datasheet - Page 3

• Manufacturer Part Number: PSMN005-30K /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN005-30K /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 45 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.5 W
• Rise Time: 16 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 65 ns
• Part # Aliases: PSMN005-30K,518

NXP Semiconductors
PSMN005-30K
Product data sheet
Fig 1.
Fig 3.
I
(%)
(A)
der
I
10
10
D
10
120
80
40
10
-1
3
2
1
0
10
function of solder point temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
Limit R
DSon
50
= V
DS
/ I
D
100
150
All information provided in this document is subject to legal disclaimers.
T
sp
1
03aa25
(°C)
Rev. 2 — 22 December 2011
200
DC
Fig 2.
N-channel TrenchMOS SiliconMAX logic level FET
P
(%)
der
120
80
40
0
function of solder point temperature
Normalized total power dissipation as a
0
10
50
PSMN005-30K
100
V
DS
(V)
t
100 μ s
10 ms
100 ms
p
150
=10 μ s
© NXP B.V. 2011. All rights reserved.
T
003aah006
sp
03aa17
(°C)
10
200
2
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