PSMN005-30K /T3 NXP Semiconductors, PSMN005-30K /T3 Datasheet - Page 7

• Manufacturer Part Number: PSMN005-30K /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN005-30K /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 45 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.5 W
• Rise Time: 16 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 65 ns
• Part # Aliases: PSMN005-30K,518

NXP Semiconductors
PSMN005-30K
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
R
V
0.016
0.012
0.008
0.004
DSon
(Ω)
(V)
0.02
GS
10
0
8
6
4
2
0
of drain current; typical values
charge; typical values
Drain-source on-state resistance as a function
0
0
I
T
V
D
T
j
DD
= 25
= 20 A
j
= 25 °C
= 15 V
°
C
20
20
40
V
GS
40
= 3.8 V
60
I
All information provided in this document is subject to legal disclaimers.
D
QG (nC)
(A)
4.5 V
10 V
03ah07
03ah11
4 V
Rev. 2 — 22 December 2011
60
80
Fig 10. Normalized drain-source on-state resistance
Fig 12. Input, output and reverse transfer capacitances
N-channel TrenchMOS SiliconMAX logic level FET
(pF)
C
10
10
10
a
1.5
0.5
4
3
2
2
1
0
10
-60
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
−1
0
1
PSMN005-30K
60
10
120
V
© NXP B.V. 2011. All rights reserved.
DS
T
j
C
C
C
(V)
03af18
(°C)
03ah10
iss
oss
rss
180
10
2
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