PSMN005-30K /T3 NXP Semiconductors, PSMN005-30K /T3 Datasheet - Page 9

• Manufacturer Part Number: PSMN005-30K /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN005-30K /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 45 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.5 W
• Rise Time: 16 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 65 ns
• Part # Aliases: PSMN005-30K,518

NXP Semiconductors
7. Package outline
Fig 14. Package outline SOT96-1 (SO8)
PSMN005-30K
Product data sheet
SO8: plastic small outline package; 8 leads; body width 3.9 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
inches
UNIT
mm
OUTLINE
VERSION
SOT96-1
0.069
max.
1.75
A
0.010
0.004
0.25
0.10
A
1
0.057
0.049
1.45
1.25
A
076E03
2
IEC
1
8
Z
pin 1 index
0.25
0.01
y
A
3
e
0.019
0.014
0.49
0.36
b
p
D
0.0100
0.0075
All information provided in this document is subject to legal disclaimers.
0.25
0.19
MS-012
JEDEC
c
b
REFERENCES
p
0.20
0.19
D
Rev. 2 — 22 December 2011
5.0
4.8
5
4
0
(1)
w
0.16
0.15
E
4.0
3.8
(2)
M
JEITA
scale
1.27
0.05
2.5
c
e
N-channel TrenchMOS SiliconMAX logic level FET
A
0.244
0.228
2
H
6.2
5.8
A
E
1
0.041
1.05
5 mm
L
H
0.039
0.016
E
E
1.0
0.4
detail X
L
p
0.028
0.024
L
L
0.7
0.6
Q
p
Q
PROJECTION
(A )
EUROPEAN
PSMN005-30K
0.25
0.01
3
A
v
θ
0.25
0.01
A
w
X
v
M
0.004
0.1
A
© NXP B.V. 2011. All rights reserved.
y
ISSUE DATE
99-12-27
03-02-18
0.028
0.012
Z
0.7
0.3
(1)
SOT96-1
8
0
θ
o
o
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