BUK7230-55A /T3 NXP Semiconductors, BUK7230-55A /T3 Datasheet - Page 7

• Manufacturer Part Number: BUK7230-55A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7230-55A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 38 A
• Resistance Drain-source Rds (on): 0.03 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Fall Time: 43 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 88 W
• Rise Time: 68 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 83 ns
• Part # Aliases: BUK7230-55A,118

NXP Semiconductors
BUK7230-55A_2
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
D
80
60
40
20
70
60
50
40
30
20
0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
V
GS
20
(V) = 6
6.5
4
40
T
j
7
= 25 °C
60
8
8
T
j
= 175 °C
V
9
80
All information provided in this document is subject to legal disclaimers.
GS
10
I
(V)
D
03na41
03na47
(A)
100
12
Rev. 02 — 16 March 2010
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.4
1.8
1.2
0.6
5
4
3
2
1
0
0
−60
−60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS standard level FET
0
0
BUK7230-55A
60
60
max
min
typ
120
120
© NXP B.V. 2010. All rights reserved.
T
T
j
j
(°C)
(°C)
03aa32
03aa28
180
180
7 of 13