BUK9Y30-75B T/R NXP Semiconductors, BUK9Y30-75B T/R Datasheet - Page 6

• Manufacturer Part Number: BUK9Y30-75B T/R
• Description: MOSFET TRENCH 31V-99V G3
• Manufacturer: NXP Semiconductors

Specifications of BUK9Y30-75B T/R

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 34 A
• Resistance Drain-source Rds (on): 0.028 Ohms
• Configuration: Single Triple Source
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-669
• Fall Time: 83 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 85 W
• Rise Time: 106 ns
• Factory Pack Quantity: 1500
• Typical Turn-off Delay Time: 51 ns
• Part # Aliases: BUK9Y30-75B,115

NXP Semiconductors
Table 6.
BUK9Y30-75B_4
Product data sheet
Symbol
t
t
t
t
d(on)
r
d(off)
f
Fig 6. Drain-source on-state resistance as a function
R
(mΩ)
DSon
30
28
26
24
22
20
T
of gate-source voltage; typical values
3
j
= 25 °C; I
Characteristics
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
D
6
= 15 A
…continued
9
Conditions
V
V
T
j
DS
GS
12
= 25 °C
= 30 V; R
= 5 V; R
V
GS
03no10
(V)
15
G(ext)
Rev. 04 — 10 April 2008
L
= 1.2 Ω;
= 10 Ω;
Fig 7. Sub-threshold drain current as a function of
(A)
I
10
10
10
10
10
10
D
−1
−2
−3
−4
−5
−6
T
gate-source voltage
0
j
= 25 °C;V
Min
-
-
-
-
N-channel TrenchMOS logic level FET
DS
min
= V
1
GS
BUK9Y30-75B
Typ
16
51
83
106
typ
2
max
Max
-
-
-
-
V
© NXP B.V. 2008. All rights reserved.
GS
(V)
03ng53
3
Unit
ns
ns
ns
ns
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