BUK9Y30-75B T/R NXP Semiconductors, BUK9Y30-75B T/R Datasheet - Page 9

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BUK9Y30-75B T/R

Manufacturer Part Number
BUK9Y30-75B T/R
Description
MOSFET TRENCH 31V-99V G3
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK9Y30-75B T/R

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
34 A
Resistance Drain-source Rds (on)
0.028 Ohms
Configuration
Single Triple Source
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-669
Fall Time
83 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
85 W
Rise Time
106 ns
Factory Pack Quantity
1500
Typical Turn-off Delay Time
51 ns
Part # Aliases
BUK9Y30-75B,115
NXP Semiconductors
BUK9Y30-75B_4
Product data sheet
Fig 16. Source current as a function of source-drain voltage; typical values
V
GS
= 0V
(A)
I
S
100
80
60
40
20
0
0
0.3
Rev. 04 — 10 April 2008
T
j
= 175 °C
0.6
T
0.9
j
= 25 °C
V
SD
03no06
(V)
N-channel TrenchMOS logic level FET
1.2
BUK9Y30-75B
© NXP B.V. 2008. All rights reserved.
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