BUK9Y30-75B T/R NXP Semiconductors, BUK9Y30-75B T/R Datasheet - Page 9

• Manufacturer Part Number: BUK9Y30-75B T/R
• Description: MOSFET TRENCH 31V-99V G3
• Manufacturer: NXP Semiconductors

Specifications of BUK9Y30-75B T/R

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 34 A
• Resistance Drain-source Rds (on): 0.028 Ohms
• Configuration: Single Triple Source
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-669
• Fall Time: 83 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 85 W
• Rise Time: 106 ns
• Factory Pack Quantity: 1500
• Typical Turn-off Delay Time: 51 ns
• Part # Aliases: BUK9Y30-75B,115

NXP Semiconductors
BUK9Y30-75B_4
Product data sheet
Fig 16. Source current as a function of source-drain voltage; typical values
V
GS
= 0V
(A)
I
S
100
80
60
40
20
0
0
0.3
Rev. 04 — 10 April 2008
T
j
= 175 °C
0.6
T
0.9
j
= 25 °C
V
SD
03no06
(V)
N-channel TrenchMOS logic level FET
1.2
BUK9Y30-75B
© NXP B.V. 2008. All rights reserved.
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