BUK9Y30-75B T/R NXP Semiconductors, BUK9Y30-75B T/R Datasheet - Page 7

• Manufacturer Part Number: BUK9Y30-75B T/R
• Description: MOSFET TRENCH 31V-99V G3
• Manufacturer: NXP Semiconductors

Specifications of BUK9Y30-75B T/R

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 34 A
• Resistance Drain-source Rds (on): 0.028 Ohms
• Configuration: Single Triple Source
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-669
• Fall Time: 83 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 85 W
• Rise Time: 106 ns
• Factory Pack Quantity: 1500
• Typical Turn-off Delay Time: 51 ns
• Part # Aliases: BUK9Y30-75B,115

NXP Semiconductors
BUK9Y30-75B_4
Product data sheet
Fig 8. Transfer characteristics: drain current as a
Fig 10. Forward transconductance as a function of
(A)
(S)
g
I
D
fs
60
40
20
50
40
30
20
0
V
T
function of gate-source voltage; typical values
drain current; typical values
0
0
DS
j
= 25 °C;V
= 25V
1
T
10
j
T
DS
= 175 °C
j
= 25 °C
= 25V
2
20
3
30
4
I
V
D
GS
(A)
03no09
03no08
(V)
40
5
Rev. 04 — 10 April 2008
Fig 9. Output characteristics: drain current as a
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
D
100
2.5
2.0
1.5
1.0
0.5
75
50
25
0
0
T
function of drain-source voltage; typical values
−60
I
junction temperature
D
0
j
= 25 °C; t
= 1 m A;V
N-channel TrenchMOS logic level FET
2
p
DS
0
= 300 s
= V
GS
4
BUK9Y30-75B
60
max
min
typ
V
6
GS
(V) = 10
120
© NXP B.V. 2008. All rights reserved.
8
T
V
j
DS
(°C)
03no11
03ng52
(V)
7.0
5.0
4.2
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
180
10
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