SUM110N04-03L-E3 Vishay/Siliconix, SUM110N04-03L-E3 Datasheet - Page 2

• Manufacturer Part Number: SUM110N04-03L-E3
• Description: MOSFET 40V 110A 230W 3.5mohm @ 10V
• Manufacturer: Vishay/Siliconix

Specifications of SUM110N04-03L-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 110 A
• Resistance Drain-source Rds (on): 2.8 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263-3
• Fall Time: 100 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.75 W
• Rise Time: 20 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 50 ns

SUM110N04-03L
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics (T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Charge
Reverse Recovery Charge
c
b
c
a
c
c
c
c
c
a
a
J
= 25 °C, unless otherwise noted
a
V
I
Symbol
RM(REC)
V
r
(BR)DSS
I
DS(on)
t
t
I
C
I
C
V
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
GSS
DSS
I
Q
Q
g
SM
I
t
oss
t
t
rss
SD
iss
S
rr
fs
gs
gd
r
f
rr
g
C
I
V
V
V
D
V
V
V
= 25 °C)
DS
DS
DS
GS
GS
≅ 110 A, V
GS
I
F
= 40 V, V
= 40 V, V
= 30 V, V
= 10 V, I
= 10 V, I
V
V
V
= 0 V, V
V
= 110 A, di/dt = 100 A/µs
V
V
V
V
DD
I
DS
V
DS
F
GS
DS
DS
GS
DS
GS
Test Conditions
= 110 A, V
b
= 0 V, V
= 30 V, R
= V
= 0 V, I
= 40 V, V
≥ 5 V, V
= 4.5 V, I
= 10 V, I
= 15 V, I
GEN
D
D
GS
DS
GS
GS
GS
= 30 A, T
= 30 A, T
, I
= 25 V, f = 1 MHz
= 0 V, T
= 0 V, T
= 10 V, I
= 10 V, R
D
GS
D
GS
L
= 250 µA
D
D
GS
GS
D
= 250 µA
= 0.35 Ω
= ± 20 V
= 30 A
= 30 A
= 10 V
= 20 A
= 0 V
= 0 V
J
J
J
J
D
= 125 °C
= 175 °C
= 125 °C
= 175 °C
g
= 110 A
= 2.5 Ω
Min
120
40
30
1
0.0029
0.0042
0.034
4800
1010
Typ
560
110
100
1.1
1.5
17
35
15
20
50
45
S-62690-Rev. C, 01-Jan-07
Document Number: 72081
0.0035
0.0053
0.0055
0.0066
0.081
Max
100
250
165
150
110
300
1.4
2.3
50
25
30
75
70
3
1
Unit
nA
µA
pF
nC
µC
ns
ns
Ω
V
A
S
A
V
A