SUM110N04-03L-E3 Vishay/Siliconix, SUM110N04-03L-E3 Datasheet - Page 3

• Manufacturer Part Number: SUM110N04-03L-E3
• Description: MOSFET 40V 110A 230W 3.5mohm @ 10V
• Manufacturer: Vishay/Siliconix

Specifications of SUM110N04-03L-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 110 A
• Resistance Drain-source Rds (on): 2.8 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263-3
• Fall Time: 100 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.75 W
• Rise Time: 20 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 50 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72081
S-62690-Rev. C, 01-Jan-07
7000
6000
5000
4000
3000
2000
1000
250
200
150
100
50
240
200
160
120
0
80
40
0
0
0
0
0
C
rss
15
V
2
V
GS
8
V
DS
DS
= 10 thru 5 V
Output Characteristics
- Drain-to-Source Voltage (V)
C
- Drain-to-Source Voltage (V)
Transconductance
oss
I
D
30
Capacitance
- Drain Current (A)
4
16
C
45
iss
6
24
60
T
C
8
32
= - 55 °C
75
125 °C
25 °C
4 V
3 V
10
40
90
0.008
0.006
0.004
0.002
0.000
250
200
150
100
50
20
16
12
0
8
4
0
0
0
0
V
I
D
DS
= 110 A
V
20
On-Resistance vs. Drain Current
GS
= 30 V
1
V
40
GS
= 4.5 V
Transfer Characteristics
Q
g
- Gate-to-Source Voltage (V)
I
25 ˚C
D
40
- Total Gate Charge (nC)
SUM110N04-03L
- Drain Current (A)
Gate Charge
T
C
2
80
= 125 ˚C
V
60
Vishay Siliconix
GS
= 10 V
120
3
- 55 ˚C
80
www.vishay.com
160
4
100
120
200
5
3