ATSAM3S-EK2 Atmel, ATSAM3S-EK2 Datasheet - Page 24

• Manufacturer Part Number: ATSAM3S-EK2
• Description: Development Boards & Kits - ARM EVAL KIT SAM3S8 & SAM3SD8 series
• Manufacturer: Atmel

Specifications of ATSAM3S-EK2

• Rohs: yes
• Product: Development Boards
• Tool Is For Evaluation Of: SAM3SD8
• Core: ARM
• Interface Type: UART
• Description/function: This kit lets designers quickly evaluate and develop code for applications running on Atmel SAM3S microcontrollers.
• Processor Series: SAM3S
• Factory Pack Quantity: 1

Latch Up (LU)
The purpose of this test is to evaluate a device’s susceptibility to Latch Up at high current and voltage conditions.
Steam Pressure Pot (SPP)
The test is used to evaluate a plastic packaged component’s ability to withstand severe conditions of pressure (15 psig),
temperature (121°C), and humidity (100%RH).
Temperature Cycle (TC)
This test is used to measure a product’s sensitivity to thermal stresses due to differences in expansion and contraction
characteristics of the die and package materials by repeated alternating temperature dwells between high (typically
150°C) and low (typically –65°C) temperature extremes.
Reliability Modeling
Failure rates for Atmel product and processes are typically calculated based on test data with acceleration factors
based on the Arrhenius Model for thermal acceleration and/or the Eyring Model for voltage acceleration. Other models,
such as Coffin-Manson (temperature cycling) may be used for specific applications or customer concerns.
Thermal Acceleration
where,
Voltage Acceleration
Voltage acceleration is only used for failure mechanisms, which are known to be accelerated by the presence of an electric
field (i.e., gate oxide defects, charge gain, etc.). The generic Voltage acceleration model has been published as:
where,
Overall Acceleration
The overall acceleration factor (AF) is computed as the product of the thermal and Voltage acceleration factors. In cases
where Voltage acceleration is inapplicable, a default value of 1.0 is assigned.
Atmel Quality Handbook
TAF
ea
k
T
f
s
P
JA
VAF
Vs
Vn
Z
=
=
=
=
=
=
=
=
=
=
=
=
Thermal Acceleration Factor
Activation Energy (eV)
Boltzman’s Constant (8.617 x 10-5 eV/°K)
Temperature (°K)
Field Conditions
Stress Conditions
Power Dissipation (W)
Thermal Resistance Coefficient - Junction to Ambient (°C/W)
Voltage Acceleration Factor
Stress Voltage (V)
Nominal Voltage (V)
Voltage Acceleration Constant (usually, 0.5 < Z < 1.0)
TAF
=
A F
AF
e
VAF
e
k
a
=
⋅




TAF
T
f
=
+
e
(
P
⋅
Z
1
f
VAF
⋅
⋅
[
θ
V
JAf
S
−
)
V
n
−
]
T
s
+
(
P
1
s
⋅
θ
JAs
)




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