BUK7624-55A /T3 NXP Semiconductors, BUK7624-55A /T3 Datasheet - Page 3

• Manufacturer Part Number: BUK7624-55A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7624-55A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 47 A
• Resistance Drain-source Rds (on): 0.024 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 31 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 106 W
• Rise Time: 56 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 38 ns
• Part # Aliases: BUK7624-55A,118

Philips Semiconductors
9397 750 08029
Product specification
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P
T
der
mb
function of mounting base temperature.
P der
= 25 C; I
(%)
=
----------------------
P
120
100
tot 25 C
80
60
40
20
P
0
tot
0
DM
25
single pulse.
100%
I D
(A)
50
10 3
10 2
10
1
75
1
P
100
t p
R DSon = V DS / I D
T
125
150
=
T mb ( o C)
t p
T
t
175
03na19
200
Rev. 02 — 01 March 2001
BUK7524-55A; BUK7624-55A
D.C.
Fig 2. Normalized continuous drain current as a
10
V
I
der
GS
function of mounting base temperature.
I der
=
(%)
4.5 V
------------------ -
I
D 25 C
120
100
80
60
40
20
I
0
D
0
V DS (V)
25
100%
TrenchMOS™ standard level FET
50
75
t p = 10 us
100 us
1 ms
10 ms
100 ms
03nb74
100
© Philips Electronics N.V. 2001. All rights reserved.
10 2
125
150
T mb ( o C)
175
03aa24
200
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