BUK7624-55A /T3 NXP Semiconductors, BUK7624-55A /T3 Datasheet - Page 8

• Manufacturer Part Number: BUK7624-55A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7624-55A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 47 A
• Resistance Drain-source Rds (on): 0.024 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 31 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 106 W
• Rise Time: 56 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 38 ns
• Part # Aliases: BUK7624-55A,118

Philips Semiconductors
9397 750 08029
Product specification
Fig 13. Transfer characteristics: drain current as a
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
V
V
GS
DS
function of gate-source voltage; typical values.
= 25 V
= 0 V
I D
(A)
80
60
40
20
0
0
2
4
T j = 25
6
O
C
T j = 175
8
V GS (V)
I S
03nb69
(A)
120
100
80
60
40
20
O
0
C
10
0.0
Rev. 02 — 01 March 2001
BUK7524-55A; BUK7624-55A
0.5
Fig 14. Gate-source voltage as a function of turn-on
T j = 175
T
j
= 25 C; I
V GS
(V)
gate charge; typical values.
O
C
10
8
6
4
2
0
1.0
0
T j = 25
D
V SD (V)
= 25 A
O
C
03nb66
V DD = 14 V
10
TrenchMOS™ standard level FET
1.5
20
© Philips Electronics N.V. 2001. All rights reserved.
V DD = 44 V
30
Q G (nC)
03nb67
40
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