BUK7624-55A /T3 NXP Semiconductors, BUK7624-55A /T3 Datasheet - Page 4

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BUK7624-55A /T3

Manufacturer Part Number
BUK7624-55A /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK7624-55A /T3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
47 A
Resistance Drain-source Rds (on)
0.024 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-404
Fall Time
31 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
106 W
Rise Time
56 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
38 ns
Part # Aliases
BUK7624-55A,118
7. Thermal characteristics
Table 4:
Philips Semiconductors
9397 750 08029
Product specification
Symbol
R
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
th(j-a)
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
thermal resistance from junction to mounting
base
7.1 Transient thermal impedance
Z th(j-mb)
(K/W)
10 -1
10 -2
10
1
10 -6
= 0.5
10 -5
Rev. 02 — 01 March 2001
10 -4
BUK7524-55A; BUK7624-55A
Conditions
vertical in still air; SOT78 package
mounted on printed circuit board;
minimum footprint; SOT404
package
Figure 4
10 -3
10 -2
P
TrenchMOS™ standard level FET
10 -1
t p
T
t p (s)
=
03nb75
t p
T
© Philips Electronics N.V. 2001. All rights reserved.
t
1
Value
60
50
1.4
Unit
K/W
K/W
K/W
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