PSMN004-60B /T3 NXP Semiconductors, PSMN004-60B /T3 Datasheet - Page 11

• Manufacturer Part Number: PSMN004-60B /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN004-60B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Resistance Drain-source Rds (on): 0.0036 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 75 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 230 W
• Rise Time: 74 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 133 ns
• Part # Aliases: PSMN004-60B,118

NXP Semiconductors
8. Revision history
Table 7.
PSMN004-60B_2
Product data sheet
Document ID
PSMN004-60B_2
Modifications:
PSMN004_60P_60B-01
(9397 750 09156)
Revision history
Release date
20091215
20020426
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number PSMN004-60B separated from data sheet PSMN004_60P_60B-01.
Data sheet status
Product data sheet
Product data
Rev. 02 — 15 December 2009
N-channel TrenchMOS SiliconMAX standard level FET
Change notice
-
-
PSMN004-60B
Supersedes
PSMN004_60P_60B-01
-
© NXP B.V. 2009. All rights reserved.
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