PSMN004-60B /T3 NXP Semiconductors, PSMN004-60B /T3 Datasheet - Page 7

• Manufacturer Part Number: PSMN004-60B /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN004-60B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Resistance Drain-source Rds (on): 0.0036 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 75 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 230 W
• Rise Time: 74 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 133 ns
• Part # Aliases: PSMN004-60B,118

NXP Semiconductors
PSMN004-60B_2
Product data sheet
Fig 5.
Fig 7.
(A)
I
10
10
10
10
10
10
D
300
200
100
(A)
I
D
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
T
j
= 25 °C
20V
10 V
0.4
8 V
7.5 V
2
0.8
min
1.2
typ
7 V
4
V
max
GS
V
1.6
GS
= 4.5 V
V DS (V)
(V)
6.5 V
5.5 V
03ah82
03aa35
6 V
5 V
Rev. 02 — 15 December 2009
2
6
N-channel TrenchMOS SiliconMAX standard level FET
Fig 6.
Fig 8.
V
(A)
I
D
GS(th)
(V)
100
80
60
40
20
0
5
4
3
2
1
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
Gate-source threshold voltage as a function of
0
V
DS
> I
1
D
x R
0
DSon
2
PSMN004-60B
T
j
60
= 175 °C
3
max
min
typ
4
120
© NXP B.V. 2009. All rights reserved.
T
25 °C
5
j
V
(°C)
03ah84
GS
03aa32
(V)
180
6
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