PMF290XN T/R NXP Semiconductors, PMF290XN T/R Datasheet - Page 4

• Manufacturer Part Number: PMF290XN T/R
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PMF290XN T/R

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1 A
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Fall Time: 11 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 560 mW
• Rise Time: 11 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 11 ns
• Part # Aliases: PMF290XN,115

Philips Semiconductors
5. Thermal characteristics
Table 4:
9397 750 12767
Product data
Symbol Parameter
R
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
th(j-sp)
Z th(j-sp)
(K/W)
10 3
10 2
10
1
10 -4
thermal resistance from junction to solder point
Thermal characteristics
0.2
0.1
0.05
0.02
= 0.5
single pulse
5.1 Transient thermal impedance
10 -3
Rev. 01 — 27 February 2004
10 -2
Conditions
Figure 4
N-channel TrenchMOS™ extremely low level FET
10 -1
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
1
Min
-
P
PMF290XN
t p
t p (s)
T
Typ
-
03an27
=
t p
T
t
Max
220
10
Unit
K/W
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