PMF290XN T/R NXP Semiconductors, PMF290XN T/R Datasheet - Page 7

• Manufacturer Part Number: PMF290XN T/R
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PMF290XN T/R

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1 A
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Fall Time: 11 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 560 mW
• Rise Time: 11 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 11 ns
• Part # Aliases: PMF290XN,115

Philips Semiconductors
9397 750 12767
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
V GS(th)
(V)
I
V
D
GS
1.5
0.5
= 0.25 mA; V
2
1
0
junction temperature.
= 0 V; f = 1 MHz
-60
DS
0
= V
GS
max
typ
min
60
(pF)
C
10 2
10
120
1
10 -1
T j ( C)
03al82
Rev. 01 — 27 February 2004
180
1
Fig 10. Sub-threshold drain current as a function of
N-channel TrenchMOS™ extremely low level FET
10
(A)
I D
T
10 -3
10 -4
10 -5
10 -6
j
= 25 C; V
gate-source voltage.
V DS (V)
0
C iss
C oss
C rss
03an00
min
DS
10 2
= 5 V
0.4
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
typ
0.8
PMF290XN
1.2
max
V GS (V)
03an65
1.6
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