BUK9608-55B /T3 NXP Semiconductors, BUK9608-55B /T3 Datasheet - Page 11

• Manufacturer Part Number: BUK9608-55B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9608-55B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 110 A
• Resistance Drain-source Rds (on): 0.007 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 86 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 203 W
• Rise Time: 123 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 131 ns
• Part # Aliases: BUK9608-55B,118

NXP Semiconductors
8. Revision history
Table 7.
BUK9608-55B
Product data sheet
Document ID
BUK9608-55B_4
Modifications:
BUK9608-55B_3
Revision history
Release date
20100504
20100429
•
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Rev. 04 — 4 May 2010
Change notice
-
-
N-channel TrenchMOS logic level FET
Supersedes
BUK9608-55B_3
BUK95_96_9E08_55B-02
BUK9608-55B
© NXP B.V. 2010. All rights reserved.
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