BUK9608-55B /T3 NXP Semiconductors, BUK9608-55B /T3 Datasheet - Page 7

• Manufacturer Part Number: BUK9608-55B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9608-55B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 110 A
• Resistance Drain-source Rds (on): 0.007 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 86 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 203 W
• Rise Time: 123 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 131 ns
• Part # Aliases: BUK9608-55B,118

NXP Semiconductors
Table 6.
BUK9608-55B
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
(A)
I
I
10
10
10
10
10
10
D
D
300
200
100
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
Characteristics
10
Parameter
source-drain voltage
reverse recovery time
recovered charge
5
2
min
1
4
…continued
4.8
typ
4.6
4.4
4.2
4
3.8
3.6
3.4
3.2
3
2.8
2.6
6
Label is V
2
max
V
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
GS
8
GS
V
= 25 A; V
= 20 A; dI
GS
DS
(V)
03nn52
Figure 15
03ng53
= -10 V; V
(V)
(V)
10
3
Rev. 04 — 4 May 2010
GS
S
/dt = -100 A/µs;
DS
= 0 V; T
= 30 V; T
Fig 6.
Fig 8.
j
= 25 °C;
R
(mΩ)
g
(S)
DSon
j
fs
120
= 25 °C
25
20
15
10
80
40
5
0
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
0
0
N-channel TrenchMOS logic level FET
25
5
BUK9608-55B
Min
-
-
-
50
10
Typ
0.85
69
72
75
V
© NXP B.V. 2010. All rights reserved.
GS
I
D
03nn51
(V)
(A)
03nn49
Max
1.2
-
-
100
15
Unit
V
ns
nC
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