PHC21025 /T3 NXP Semiconductors, PHC21025 /T3 Datasheet - Page 10
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PHC21025 /T3
Manufacturer Part Number
PHC21025 /T3
Description
MOSFET TAPE-7 MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PHC21025_T3.pdf
(16 pages)
Specifications of PHC21025 /T3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.5 A, - 2.3 A
Resistance Drain-source Rds (on)
0.1 Ohms
Configuration
Dual Dual Drain
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Fall Time
26 ns
Minimum Operating Temperature
- 65 C
Power Dissipation
2 W
Rise Time
36 ns
Factory Pack Quantity
2500
Typical Turn-off Delay Time
55 ns
Part # Aliases
PHC21025,118
NXP Semiconductors
PHC21025
Product data sheet
Fig 13. Source current as a function of source-drain
Fig 15. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
10
10
10
I
S
10
6
4
2
0
4
3
2
voltage; N-channel; typical values
of drain current; N-channel; typical values
V
(1) T
(2) T
(3) T
V
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
0
0
GD
DS
D
D
D
D
D
D
≥ I
= 0.
j
j
j
= 150 °C.
= 25 °C.
= -55 °C.
= 0.1 A.
= 0.5 A.
= 1 A.
= 2.2 A.
= 3.5 A.
= 7 A.
D
2
x R
(1)(2)
DSon
(3)(4)(5)
0.5
; T
4
(6)
(1)
j
= 25 °C.
(2)
6
1
(3)
V
SD
All information provided in this document is subject to legal disclaimers.
8
V
(V)
GS
mda217
mbe159
(V)
1.5
10
Rev. 04 — 17 March 2011
Fig 14. Source current as a function of source-drain
Fig 16. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
10
10
10
I
S
−6
−4
−2
0
4
3
2
voltage; P-channel; typical values
of drain current; typical values
V
(1) T
(2) T
(3) T
-V
(1) I
(2) I
(3) I
(4) I
(5) I
0
0
GD
DS
D
D
D
D
D
= 0.
j
j
j
≥ -I
= -4.5 A.
Complementary intermediate level FET
= 150 °C.
= 25 °C.
= -55 °C.
= -0.1 A.
= -0.5 A.
= -1 A.
= -2.3 A.
−2
D
(1)
−0.5
x R
(2)(3)
DSon
(4) (5)
−4
; T
−1
j
= 25 °C.
(1)
−6
PHC21025
(2)
−1.5
© NXP B.V. 2011. All rights reserved.
−8
(3)
V
V
SD
GS
mbe158
mda165
(V)
(V)
−10
−2
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