PHC21025 /T3 NXP Semiconductors, PHC21025 /T3 Datasheet - Page 8

• Manufacturer Part Number: PHC21025 /T3
• Description: MOSFET TAPE-7 MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PHC21025 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A, - 2.3 A
• Resistance Drain-source Rds (on): 0.1 Ohms
• Configuration: Dual Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 26 ns
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 2 W
• Rise Time: 36 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 55 ns
• Part # Aliases: PHC21025,118

NXP Semiconductors
PHC21025
Product data sheet
Fig 5.
Fig 7.
(pF)
600
400
200
C
(A)
I
16
12
D
0
8
4
0
voltage; N-channel; typical values
function of drain-source voltage; N-channel;
typical values
Capacitance as a function of drain-source
Output characteristics: drain current as a
0
0
V
10 V
GS
2
=
6 V
5 V
4.5 V
4 V
3.5 V
3 V
10
4
6
C
C
C
oss
rss
iss
20
8
V
All information provided in this document is subject to legal disclaimers.
DS
10
V
(V)
mbe137
mbe142
DS
(V)
30
12
Rev. 04 — 17 March 2011
Fig 6.
Fig 8.
(pF)
600
C
400
200
−10
(A)
I
−8
−6
−4
−2
D
0
0
voltage; P-channel; typical values
function of drain-source voltage; P-channel;
typical values
Capacitance as a function of drain-source
Output characteristics: drain current as a
0
0
V
−10 V
GS
Complementary intermediate level FET
−2
=
−7.5 V
−10
−4
−6
−20
−8
PHC21025
C
C
C
oss
iss
rss
V
© NXP B.V. 2011. All rights reserved.
DS
−10
−2.5 V
V
−3.5 V
(V)
−6 V
−4.5 V
−3 V
−5 V
−4 V
mbe154
mbe144
DS
(V)
−30
−12
8 of 16