PHC21025 /T3 NXP Semiconductors, PHC21025 /T3 Datasheet - Page 13

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PHC21025 /T3

Manufacturer Part Number
PHC21025 /T3
Description
MOSFET TAPE-7 MOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PHC21025 /T3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.5 A, - 2.3 A
Resistance Drain-source Rds (on)
0.1 Ohms
Configuration
Dual Dual Drain
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Fall Time
26 ns
Minimum Operating Temperature
- 65 C
Power Dissipation
2 W
Rise Time
36 ns
Factory Pack Quantity
2500
Typical Turn-off Delay Time
55 ns
Part # Aliases
PHC21025,118
NXP Semiconductors
8. Revision history
Table 7.
PHC21025
Product data sheet
Document ID
PHC21025 v.4
Modifications:
PHC21025 v.3
Revision history
Release date
20110317
20101217
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Rev. 04 — 17 March 2011
Change notice
-
-
Complementary intermediate level FET
PHC21025
Supersedes
PHC21025 v.3
PHC21025 v.2
© NXP B.V. 2011. All rights reserved.
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