BUK7880-55 /T3 NXP Semiconductors, BUK7880-55 /T3 Datasheet - Page 10

• Manufacturer Part Number: BUK7880-55 /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7880-55 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 3.5 A
• Configuration: Single Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 15 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1800 mW
• Rise Time: 15 ns
• Factory Pack Quantity: 4000
• Typical Turn-off Delay Time: 18 ns
• Part # Aliases: BUK7880-55,135

NXP Semiconductors
8. Revision history
Table 7.
BUK7880-55
Product data sheet
Document ID
BUK7880-55 v.3
Modifications:
BUK7880-55_2
Revision history
Release date
20110421
19980401
•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product specification
Rev. 3 — 21 April 2011
N-channel TrenchMOS standard level FET
Change notice
-
-
BUK7880-55
Supersedes
BUK7880-55_2
-
© NXP B.V. 2011. All rights reserved.
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