BUK7880-55 /T3 NXP Semiconductors, BUK7880-55 /T3 Datasheet - Page 6

• Manufacturer Part Number: BUK7880-55 /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7880-55 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 3.5 A
• Configuration: Single Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 15 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1800 mW
• Rise Time: 15 ns
• Factory Pack Quantity: 4000
• Typical Turn-off Delay Time: 18 ns
• Part # Aliases: BUK7880-55,135

NXP Semiconductors
BUK7880-55
Product data sheet
Fig 6.
Fig 8.
(A)
(A)
I
I
D
D
40
30
20
10
20
15
10
0
5
0
function of drain-source voltage; typical values
function of gate-source voltage; typical values
T
Output characteristics: drain current as a
V
Transfer characteristics: drain current as a
0
0
V
j
DS
GS
= 25 °C
> I
(V) = 16
12
10
D
2
x R
2
DSon
T
j
= 150 °C
4
4
4.5 4.0
6
T
j
= 25 °C
6
All information provided in this document is subject to legal disclaimers.
8
V
003aaf272
V
003aaf274
GS
DS
(V)
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
(V)
10
8
Rev. 3 — 21 April 2011
Fig 7.
Fig 9.
R
(mΩ)
DS(on)
(S)
g
fs
120
100
80
60
8
6
4
2
of drain current; typical values
drain current; typical values
T
Drain-source on-state resistance as a function
V
Forward transconductance as a function of
0
0
j
DS
N-channel TrenchMOS standard level FET
= 25 °C
> I
D
V
5
4
x R
GS
(V) = 6.0
DSon
10
8
BUK7880-55
15
12
6.5
7.0
© NXP B.V. 2011. All rights reserved.
20
16
003aaf273
003aaf275
I
I
8.0
D
D
9.0
(A)
(A)
10
25
20
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