SI6874EDQ-T1 Vishay/Siliconix, SI6874EDQ-T1 Datasheet

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... Si6874EDQ Top View Ordering Information: Si6874EDQ-T1 Si6874EDQ-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

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... Si6874EDQ Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate Body Leakage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...

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... Q − Total Gate Charge (nC) g Document Number: 71252 S-50695—Rev. B, 18-Apr Si6874EDQ Vishay Siliconix Transfer Characteristics −55_C C 24 25_C 0.0 0.5 1.0 1.5 V − Gate-to-Source Voltage (V) GS Capacitance 2500 2000 C iss ...

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... Si6874EDQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.4 0.6 0.8 V − Source-to-Drain Voltage (V) SD Threshold Voltage 0 250 mA D 0.2 −0.0 −0.2 −0.4 −0.6 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient ...

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... Package Reliability represent a composite of all qualified locations. http://www.vishay.com/ppg?71252. Document Number: 71252 S-50695—Rev. B, 18-Apr-05 Normalized Thermal Transient Impedance, Junction-to-Foot −2 10 Square Wave Pulse Duration (sec) For related documents such as package/tape drawings, part marking, and reliability data, see Si6874EDQ Vishay Siliconix − www.vishay.com 5 ...

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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...