SI6874EDQ-T1 Vishay/Siliconix, SI6874EDQ-T1 Datasheet - Page 4

• Manufacturer Part Number: SI6874EDQ-T1
• Description: MOSFET 20V 6.5A
• Manufacturer: Vishay/Siliconix

Specifications of SI6874EDQ-T1

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5.3 A
• Resistance Drain-source Rds (on): 26 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Fall Time: 1300 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.2 W
• Rise Time: 1300 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 5500 ns

Si6874EDQ
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.0
−0.2
−0.4
−0.6
0.01
0.4
0.2
0.1
20
10
1
2
1
−50
10
0
−4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
−25
Source-Drain Diode Forward Voltage
V
0.4
SD
0
T
− Source-to-Drain Voltage (V)
J
T
Threshold Voltage
I
= 150_C
D
J
10
− Temperature (_C)
= 250 mA
25
−3
0.6
50
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.8
75
10
100
−2
T
1.0
J
= 25_C
125
Square Wave Pulse Duration (sec)
150
1.2
10
−1
1
0.08
0.06
0.04
0.02
0.00
32
24
16
10
8
0
0
−2
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
V
GS
10
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
−1
− Gate-to-Source Voltage (V)
DM
JM
2
− T
t
A
Time (sec)
1
= P
t
2
DM
1
3
Z
thJA
I
100
thJA
D
t
t
1
2
= 6.5 A
(t)
S-50695—Rev. B, 18-Apr-05
= 86_C/W
Document Number: 71252
4
10
600
5
100
6