SI6874EDQ-T1 Vishay/Siliconix, SI6874EDQ-T1 Datasheet - Page 2

• Manufacturer Part Number: SI6874EDQ-T1
• Description: MOSFET 20V 6.5A
• Manufacturer: Vishay/Siliconix

Specifications of SI6874EDQ-T1

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5.3 A
• Resistance Drain-source Rds (on): 26 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Fall Time: 1300 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.2 W
• Rise Time: 1300 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 5500 ns

Si6874EDQ
Vishay Siliconix
Notes
a.
b.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate Body Leakage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
8
6
4
2
0
b
0
Parameter
Gate-Current vs. Gate-Source Voltage
3
a
a
V
GS
a
− Gate-to-Source Voltage (V)
6
a
J
= 25_C UNLESS OTHERWISE NOTED)
9
Symbol
12
V
r
I
DS(on)
DS(on)
t
t
I
I
I
I
GS(th)
V
D(on)
Q
Q
d(on)
d(off)
GSS
GSS
DSS
DSS
Q
g
SD
t
t
fs
gs
gd
r
f
g
15
18
V
V
I
DS
D
DS
^ 1 A, V
V
V
= 10 V, V
DS
DS
= 20 V, V
V
V
V
V
V
V
V
V
V
I
DS
Test Condition
GS
GS
DS
GS
S
DS
DD
DD
DS
= 0 V, V
= 0 V, V
= 1.5 A, V
= V
= 5 V, V
= 2.5 V, I
= 1.8 V, I
= 20 V, V
= 4.5 V, I
= 10 V, R
= 10 V, R
= 10 V, I
GEN
GS
GS
GS
GS
GS
, I
= 4.5 V, R
= 4.5 V, I
= 0 V, T
D
GS
D
GS
= "4.5 V
D
D
= "12 V
D
GS
= 250 mA
L
L
= 6.5 A
= 6.5 A
= 5.8 A
= 5.0 A
= 4.5 V
= 10 W
= 10 W
= 0 V
= 0 V
10,000
1,000
J
0.01
D
G
100
= 85_C
0.1
10
= 6.5 A
= 6 W
1
0
T
Gate Current vs. Gate-Source Voltage
J
= 150_C
3
V
GS
Min
0.40
20
− Gate-to-Source Voltage (V)
T
6
J
= 25_C
0.021
0.025
0.031
Typ
0.65
12.5
2.7
2.7
0.7
1.3
5.5
4.6
25
S-50695—Rev. B, 18-Apr-05
Document Number: 71252
9
Max
0.026
0.031
0.039
"10
"1
1.0
1.1
1.0
2.0
8.0
7.0
20
18
1
12
Unit
mA
mA
mA
mA
nC
ms
ms
V
A
W
S
V
15