SI6874EDQ-T1 Vishay/Siliconix, SI6874EDQ-T1 Datasheet - Page 5

• Manufacturer Part Number: SI6874EDQ-T1
• Description: MOSFET 20V 6.5A
• Manufacturer: Vishay/Siliconix

Specifications of SI6874EDQ-T1

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5.3 A
• Resistance Drain-source Rds (on): 26 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Fall Time: 1300 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.2 W
• Rise Time: 1300 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 5500 ns

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations.
http://www.vishay.com/ppg?71252.
Document Number: 71252
S-50695—Rev. B, 18-Apr-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
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Duty Cycle = 0.5
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Single Pulse
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Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
For related documents such as package/tape drawings, part marking, and reliability data, see
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Vishay Siliconix
Si6874EDQ
www.vishay.com
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