MIKROE-957 mikroElektronika, MIKROE-957 Datasheet - Page 81

• Manufacturer Part Number: MIKROE-957
• Description: Other Development Tools ASLK PRO ANALOG DEVELOPMENT SYSTEM
• Manufacturer: mikroElektronika

Specifications of MIKROE-957

• Rohs: yes
• Product: Analog System Lab Kit PRO
• Tool Is For Evaluation Of: TL082, MPY634
• Operating Supply Voltage: 2.5 V to 5.5 V
• Description/function: Analog Lab Kit for Undergraduate Engineering
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C

2N3906, 2N3904, BS250
A.6.1 2N3906 Features
• PNP General Purpose Transistor
• Collector-Emiter Breakdown Voltage:
• Collector-Base Breakdown Voltage:
• h
• Transition Frequency: f = 100MHz @ V
A.6.2 Download Datasheet
http://61.222.192.61/mccsemi/
up_pdf/2N3906(TO-92).pdf
Analog System Lab Kit PRO
V
V
I
C
FE
(BR)CEO
(BR)CBO
= 10mA DC
: 100 @ I
PNP General Purpose Amplifier
= 40V
= 40V
C
= 10mA DC, V
Figure A.6: 2N3906
E
B
CE
C
= 1V DC
CE
= 20V DC,
• NPN General Purpose Transistor
• Collector-Emiter Breakdown Voltage:
• Collector-Base Breakdown Voltage:
• h
• Transition Frequency: f = 100MHz @ V
A.6.3 2N3904 Features
A.6.4 Download Datasheet
http://61.222.192.61/mccsemi/
up_pdf/2N3904(TO-92).pdf
V
V
I
C
FE
(BR)CEO
(BR)CBO
= 10mA DC
: 100 @ I
= 40V
= 60V
NPN General Purpose Amplifier
C
= 10mA DC, V
Figure A.7: 2N3906
E
B
CE
= 1V DC
C
CE
= 20V DC,
A.6.5 BS250 Features
• P-CHANNEL ENHANCEMENT MODE VERTICAL
• Drain-Source Voltage: V
• Continuous Drain Current I
• Gate-Source Voltage: V
• Static Drain-Source on-State Resistance:
• Gate-Source Threshold Voltage:
A.6.6 Download Datasheet
http://www.diodes.com/datasheets/BS250P.pdf
DMOS FET
@ T
R
V
DS(ON)
GS(TH)
AMB
= 14Ω @ V
Transistors
Min -1V; Max: -3.5V @ I
= 25°C
P-Channel Enhancement
Mode Vertical DMOS FET
Figure A.8: BS250
GS
= -10V, I
D
GS
G S
DS
= ±20 V
= -45V
D
= -230 mA
D
= -200mA
D
=-1mA, V
DS
=V
GS
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