SI1307EDL-T1 Vishay/Siliconix, SI1307EDL-T1 Datasheet

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SI1307EDL-T1

Manufacturer Part Number
SI1307EDL-T1
Description
MOSFET 12V 0.91A
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI1307EDL-T1

Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.85 A
Resistance Drain-source Rds (on)
0.29 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-323-3
Fall Time
450 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
290 mW
Rise Time
450 ns
Factory Pack Quantity
3000
Typical Turn-off Delay Time
910 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1307EDL-T1-E3
Manufacturer:
TI
Quantity:
117
Part Number:
SI1307EDL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI1307EDL-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71096
S10-0721-Rev. B, 29-Mar-10
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 12
(V)
0.290 at V
0.435 at V
0.580 at V
R
DS(on)
J
a
= 150 °C)
a
GS
GS
GS
G
Ordering Information: Si1307EDL-T1-E3 (Lead (Pb)-free)
S
(Ω)
= - 4.5 V
= - 2.5 V
= - 1.8 V
P-Channel 1.8 V (G-S) MOSFET
1
2
a
SC-70 (3-LEADS)
SOT-323
Top View
a
A
T
T
T
T
= 25 °C, unless otherwise noted
Si1307EDL-T1-GE3 (Lead (Pb)-free and Halogen-free)
± 0.91
± 0.74
± 0.64
I
A
A
A
A
D
Steady State
Steady State
= 25 °C
= 70 °C
= 25 °C
= 70 °C
3
(A)
t ≤ 5 s
D
Symbol
T
J
V
FEATURES
V
I
P
, T
• Halogen-free According to IEC 61249-2-21
• ESD Protection: 3000 V
• Compliant to RoHS Directive 2002/95/EC
DM
I
I
GS
DS
D
S
D
Symbol
stg
R
R
Definition
Marking Code
thJA
thJF
LF
XX
Part # Code
± 0.91
± 0.72
- 0.28
Lot Traceability
0.34
0.22
and Date Code
5 s
Typical
315
360
285
- 55 to 150
- 12
± 8
± 3
Steady State
Maximum
375
430
340
± 0.85
± 0.68
- 0.24
Vishay Siliconix
0.29
0.19
Si1307EDL
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI1307EDL-T1 Summary of contents

Page 1

... Halogen-free According to IEC 61249-2-21 I (A) D Definition ± 0.91 • ESD Protection: 3000 V ± 0.74 • Compliant to RoHS Directive 2002/95/EC ± 0.64 SOT-323 SC-70 (3-LEADS) Marking Code Top View Si1307EDL-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol ° ° ...

Page 2

... Si1307EDL Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Source-Drain Diode Forward Voltage Document Number: 71096 S10-0721-Rev. B, 29-Mar °C J 0.8 1.0 1 Si1307EDL Vishay Siliconix 400 300 C iss 200 C 100 oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 4 1.2 0.8 ...

Page 4

... Si1307EDL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 400 300 I GSS 200 100 Gate-to-Source Voltage (V) GS Gate-Current vs. Gate-to-Source Voltage 0.4 0 250 µA D 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 1000 (µ °C 0.01 0.001 0.0001 ...

Page 5

... Document Number: 71096 S10-0721-Rev. B, 29-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si1307EDL Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 360 ° ...

Page 6

0. Document Number: 71153 06-Jul-01 Package Information Vishay Siliconix Dim Min Nom Max A 0.90 – 1.10 A – – 0. ...

Page 7

... INTRODUCTION This technical note discusses pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for single-channel LITTLE FOOT power MOSFETs in the SC-70 package. These new Vishay Siliconix devices are intended for small-signal applications where a miniaturized package is needed and low levels of current (around 350 mA) need to be switched, either directly or by using a level shift configuration ...

Page 8

AN813 Vishay Siliconix THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the 3-pin SC-70 measured as junction-to-foot thermal resistance is 285_C/W typical, 340_C/W maximum. Junction-to-foot thermal resistance for the 6-pin SC70-6 is 105_C/W typical, 130_C/W maximum — ...

Page 9

RECOMMENDED MINIMUM PADS FOR SC-70: 3-Lead Return to Index Return to Index Document Number: 72601 Revision: 21-Jan-08 Application Note 826 0.025 0.022 (0.622) (0.559) 0.027 (0.686) 0.071 (1.803) Recommended Minimum Pads Dimensions in Inches/(mm) Vishay Siliconix www.vishay.com 17 ...

Page 10

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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