SI1307EDL-T1 Vishay/Siliconix, SI1307EDL-T1 Datasheet - Page 5

• Manufacturer Part Number: SI1307EDL-T1
• Description: MOSFET 12V 0.91A
• Manufacturer: Vishay/Siliconix

Specifications of SI1307EDL-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.85 A
• Resistance Drain-source Rds (on): 0.29 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323-3
• Fall Time: 450 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 290 mW
• Rise Time: 450 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 910 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71096.
Document Number: 71096
S10-0721-Rev. B, 29-Mar-10
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
0.02
0.05
0.2
0.1
0.05
0.1
0.02
0.2
Duty Cycle = 0.5
Duty Cycle = 0.5
10
Single Pulse
-3
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
10
1
-1
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
JM
- T
1
t
A
1
= P
t
2
DM
Vishay Siliconix
Z
thJA
thJA
100
Si1307EDL
t
t
1
2
(t)
= 360 °C/W
www.vishay.com
6
1
0
0
0
5