SI1307EDL-T1 Vishay/Siliconix, SI1307EDL-T1 Datasheet - Page 5
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SI1307EDL-T1
Manufacturer Part Number
SI1307EDL-T1
Description
MOSFET 12V 0.91A
Manufacturer
Vishay/Siliconix
Datasheet
1.SI1307EDL-T1.pdf
(10 pages)
Specifications of SI1307EDL-T1
Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.85 A
Resistance Drain-source Rds (on)
0.29 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-323-3
Fall Time
450 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
290 mW
Rise Time
450 ns
Factory Pack Quantity
3000
Typical Turn-off Delay Time
910 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI1307EDL-T1-E3
Manufacturer:
TI
Quantity:
117
Part Number:
SI1307EDL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI1307EDL-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71096.
Document Number: 71096
S10-0721-Rev. B, 29-Mar-10
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
0.02
0.05
0.2
0.1
0.05
0.1
0.02
0.2
Duty Cycle = 0.5
Duty Cycle = 0.5
10
Single Pulse
-3
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
10
1
-1
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
JM
- T
1
t
A
1
= P
t
2
DM
Vishay Siliconix
Z
thJA
thJA
100
Si1307EDL
t
t
1
2
(t)
= 360 °C/W
www.vishay.com
6
1
0
0
0
5