SI1307EDL-T1 Vishay/Siliconix, SI1307EDL-T1 Datasheet - Page 4

• Manufacturer Part Number: SI1307EDL-T1
• Description: MOSFET 12V 0.91A
• Manufacturer: Vishay/Siliconix

Specifications of SI1307EDL-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.85 A
• Resistance Drain-source Rds (on): 0.29 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323-3
• Fall Time: 450 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 290 mW
• Rise Time: 450 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 910 ns

Si1307EDL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
400
300
200
100
0.4
0.3
0.2
0.0
0.1
0
- 50
0
Gate-Current vs. Gate-to-Source Voltage
- 25
V
GS
2
0
- Gate-to-Source Voltage (V)
Threshold Voltage
T
J
25
- Temperature (°C)
I
D
50
4
I
= 250 µA
GSS
(µA) at T = 25 °C
75
100
6
125
150
8
0.0001
0.001
1000
0.01
100
0.1
20
16
12
10
8
4
0
1
10
0
1 .
-3
Gate-to-Source Voltage vs. Gate Current
I
10
G
I
V
G
-2
(µA) at 150 °C
T
GS
(µA) at 25 °C
A
= 25 °C
- Gate-to-Source Voltage (V)
Single Pulse Power
10
-1
Time (s)
S10-0721-Rev. B, 29-Mar-10
1
1
Document Number: 71096
10
100
600
8