SI1307EDL-T1 Vishay/Siliconix, SI1307EDL-T1 Datasheet - Page 4
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SI1307EDL-T1
Manufacturer Part Number
SI1307EDL-T1
Description
MOSFET 12V 0.91A
Manufacturer
Vishay/Siliconix
Datasheet
1.SI1307EDL-T1.pdf
(10 pages)
Specifications of SI1307EDL-T1
Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.85 A
Resistance Drain-source Rds (on)
0.29 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-323-3
Fall Time
450 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
290 mW
Rise Time
450 ns
Factory Pack Quantity
3000
Typical Turn-off Delay Time
910 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI1307EDL-T1-E3
Manufacturer:
TI
Quantity:
117
Part Number:
SI1307EDL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI1307EDL-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si1307EDL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
400
300
200
100
0.4
0.3
0.2
0.0
0.1
0
- 50
0
Gate-Current vs. Gate-to-Source Voltage
- 25
V
GS
2
0
- Gate-to-Source Voltage (V)
Threshold Voltage
T
J
25
- Temperature (°C)
I
D
50
4
I
= 250 µA
GSS
(µA) at T = 25 °C
75
100
6
125
150
8
0.0001
0.001
1000
0.01
100
0.1
20
16
12
10
8
4
0
1
10
0
1 .
-3
Gate-to-Source Voltage vs. Gate Current
I
10
G
I
V
G
-2
(µA) at 150 °C
T
GS
(µA) at 25 °C
A
= 25 °C
- Gate-to-Source Voltage (V)
Single Pulse Power
10
-1
Time (s)
S10-0721-Rev. B, 29-Mar-10
1
1
Document Number: 71096
10
100
600
8