SI1417EDH-T1 Vishay/Siliconix, SI1417EDH-T1 Datasheet - Page 3

• Manufacturer Part Number: SI1417EDH-T1
• Description: MOSFET 12V 3.3A 1.56W 85 mohms @ 4.5V
• Manufacturer: Vishay/Siliconix

Specifications of SI1417EDH-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.7 A
• Resistance Drain-source Rds (on): 0.16 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 1400 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1 W
• Rise Time: 1400 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 4900 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71412
S10-0935-Rev. B, 19-Apr-10
0.5
0.4
0.3
0.2
0.1
0.0
8
6
4
2
0
5
4
3
2
1
0
0.0
0.0
0
V
I
D
DS
On-Resistance vs. Drain Current
V
= - 3.3 A
GS
1.5
1.5
1
= 6 V
V
V
GS
DS
= 1.8 V
Output Characteristics
Q
= 5 V thru 2.5 V
- Drain-to-Source Voltage (V)
g
I
- Total Gate Charge (nC)
D
- Drain Current (A)
Gate Charge
3.0
3.0
2
1.5 V
4.5
4.5
3
1 V
V
V
GS
GS
6.0
6.0
4
= 2.5 V
= 4.5 V
2 V
7.5
7.5
5
1200
1000
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
8
6
4
2
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
V
I
D
GS
= - 3.3 A
2
0.5
= 4.5 V
V
V
DS
GS
T
Transfer Characteristics
0
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
4
25
Capacitance
C
1.0
oss
50
6
Vishay Siliconix
25 °C
T
C
C
Si1417EDH
1.5
iss
= - 55 °C
75
8
www.vishay.com
100
2.0
125 °C
10
125
2.5
150
12
3