SI1417EDH-T1 Vishay/Siliconix, SI1417EDH-T1 Datasheet - Page 4

• Manufacturer Part Number: SI1417EDH-T1
• Description: MOSFET 12V 3.3A 1.56W 85 mohms @ 4.5V
• Manufacturer: Vishay/Siliconix

Specifications of SI1417EDH-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.7 A
• Resistance Drain-source Rds (on): 0.16 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 1400 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1 W
• Rise Time: 1400 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 4900 ns

Si1417EDH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
0.1
10
0.01
- 50
1
0.1
2
1
0
10
- 25
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Source-Drain Diode Forward Voltage
0.3
T
V
T
0
J
J
SD
= 150 °C
- Junction Temperature (°C)
Threshold Voltage
- Source-to-Drain Voltage (V)
I
Single Pulse
D
25
= 250 µA
10
0.6
-3
50
T
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.9
75
J
= 25 °C
100
10
-2
1.2
125
150
Square Wave Pulse Duration (s)
1.5
10
-1
0.25
0.20
0.15
0.10
0.05
0.00
1
35
28
21
14
0.001
7
0
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
V
0.01
GS
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
- Gate-to-Source Voltage (V)
P
DM
2
JM
- T
I
t
D
A
Time (s)
1
= P
= - 3.3 A
0
S10-0935-Rev. B, 19-Apr-10
t
3
1 .
2
DM
Document Number: 71412
Z
thJA
thJA
100
t
t
1
2
(t)
4
= 100 °C/W
1
5
6
0
0
1
6
0