SI1417EDH-T1 Vishay/Siliconix, SI1417EDH-T1 Datasheet - Page 9

• Manufacturer Part Number: SI1417EDH-T1
• Description: MOSFET 12V 3.3A 1.56W 85 mohms @ 4.5V
• Manufacturer: Vishay/Siliconix

Specifications of SI1417EDH-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.7 A
• Resistance Drain-source Rds (on): 0.16 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 1400 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1 W
• Rise Time: 1400 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 4900 ns

Document Number: 71334
12-Dec-03
FIGURE 4.
400
320
240
160
80
10
0
-5
10
-4
Leadframe Comparison on EVB
10
-3
10
-2
Time (Secs)
10
Alloy
42
-1
1
10
Copper
100
1000
FIGURE 5.
250
200
150
100
50
10
0
-5
10
Leadframe Comparison on Alloy 42 1-inch
-4
10
-3
10
-2
Time (Secs)
Alloy
42
10
-1
Vishay Siliconix
1
Copper
10
100
www.vishay.com
AN815
2
1000
PCB
3